features ? low on-state resistance ? fast switching ? low gate charge & low c rss ? fully characterized avalanche voltage and current ? specially desigened for ac adapter, battery charger and smps ? in compliance with eu rohs 2002/95/ec directives mechanical information ? case: to-3pn molded plastic ? terminals : solderable per mil-std-750,method 2026 marking & ordering information type marking package packing HY18N50W 18n50w to-3pn 30pcs/tube absolute maximum ratings (t c =25c unless otherwise specified ) symbol thermal characteristics company reserves the right to improve product design units junction-to-case thermal resistance r q jc 0.62 /w junction-to-ambient thermal resistance r q ja 40 /w 200 1.6 w avalanche energy with single pulse l=30mh, i as =8.6a, v ds =140v e as 1050 mj t c =25 maximum power dissipation derating factor p d a pulsed drain current 1) i dm 72 a t c =25 500v / 18a n-channel enhancement mode mosfet 500 v gate-source voltage v gs + 30 v symbol value parameter value units drain-source voltage v ds continuous drain current i d 18 HY18N50W 500v, r ds(on) =0.32 w @v gs =10v, i d =9a operating junction and storage temperature range t j, t stg -55 to +150 note : 1. maximum dc current limited by the package parameter fig. 1 C forward current derating curve ambient temperature ( ) 25 50 75 100 125 150 175 single phase half wave 60hz fig. 2 C maximum non - 1 2 5 10 single 1 4 10 20 100 t 0 0.2 0.4 0.6 0.0 rev. 1, 11 - jan - 2012 page.1 to - 3pn 2 3 1 drain gate source 1 2 3
symbol min. typ. max. units bv dss 500 - - v v gs(th) 2 - 4 v r ds(on) - 0.26 0.32 w i dss - - 1.0 ua i gss - - + 100 na qg - 52.2 - qgs - 10.8 - qgd - 14.8 - t d(on) - 21.8 32 t r - 36.8 46 t d(off) - 88.2 112 t f - 46 66 c iss - 2250 2650 c oss - 320 420 c rss - 7.4 12 i s - - 18 a i sm - - 72 a v sd - - 1.5 v t rr - 480 - ns q rr - 4.5 - uc note : pulse test : pulse width Q 300us, duty cycle Q 2% reverse recovery charge zero gate voltage drain current gate body leakage current v dd =250v i d =18a v gs =10v r g =25 w v ds =25v v gs =0v f=1.0m hz source-drain diode v gs =0v i s =18a di/dt=100a/us - - i s =18a v gs =0v ns max. pulsed source current diode forward voltage reverse recovery time turn-off delay time turn-off fall time input capacitance output capacitance static v gs =0v i d =250ua v ds =v gs i d =250ua v gs =10v i d =9a v ds =500v v gs =0v v gs = + 30v v ds =0v reverse transfer capacitance max. diode forwad voltage gate-drain charge dynamic v ds =400v i d =18a v gs =10v nc turn-on delay time turn-on rise time pf HY18N50W electrical characteristics ( t c =25, unless otherwise noted ) test condition paramter drain-source breakdown voltage gate threshold voltage drain-source on-state resistance total gate charge gate-source charge rev. 1, 11 - jan - 2012 page.2
HY18N50W typical characteristics curves ( t c =25 , unless otherwise noted) 0 10 20 30 40 50 0 10 20 30 40 50 i d - drain - to - source current (a) v ds - drain - to - source voltage (v) 6.0v v gs = 20v~ 8.0v 5.0v 7.0v 0 0.1 0.2 0.3 0.4 0.5 0.6 0 4 8 12 16 20 r ds(on) - on resistance( w ) i d - drain current (a) v gs = 20v v gs =10v 0 1000 2000 3000 4000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain - to - source voltage (v) ciss f = 1mhz v gs = 0v crss coss 0 0.5 1 1.5 2 3 4 5 6 7 8 9 10 r ds(on) - on resistance( w ) v gs - gate - to - source voltage (v) i d =9.0a 0 1 10 100 1 2 3 4 5 6 7 8 9 10 i d - drain source current (a) v gs - gate - to - source voltage (v) v ds =50v t j = 125 o c 25 o c - 55 o c fig.1 output characteristric 0 2 4 6 8 10 12 0 10 20 30 40 50 60 v gs - gate - to - source voltage (v) q g - gate charge (nc) i d =18a v ds =400v v ds =250v v ds =100v fig.2 transfer characteristric fig.3 on - resistance vs drain current fig.4 on - resistance vs gate to source voltage fig.5 capacitance characteristic fig.6 gate charge characteristic rev. 1, 11 - jan - 2012 page.3
HY18N50W typical characteristics curves ( t c =25 , unless otherwise noted) 0.8 0.9 1 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 bv dss - breakdown voltage (normalized) t j - junction temperature ( o c) i d = 250 m a 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - to - drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on - resistance (normalized) t j - junction temperature ( o c) v gs =10 v i d =9.0a fig.7 on - resistance vs junction temperature fig.8 breakdown voltage vs junction temperature fig.9 body diode forward voltage characteristic rev. 1, 11 - jan - 2012 page.4
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